Illustration for selection reference only

FM24V10-GTR

I2C interface ferroelectric random access memory (F-RAM) device

Product Code
DH1C4F14DF
Brand
Infineon/英飞凌
Package
SOIC-8
Packaging
—
Category
Integrated Circuits
Weight
—
DatasheetNo verified manufacturer datasheet available yet
DESCRIPTION

Description

OVERVIEW

Product Overview

This device is a serial ferroelectric random access memory with an I2C interface, belonging to the non-volatile memory category and commonly supplied in an 8-pin SOIC package. Ferroelectric storage uses ferroelectric capacitors to hold data; writes do not require waiting for an internal erase cycle, and data is retained after power loss. Such devices are used where frequent writes or fast data saving are needed, such as data logging, parameter storage and event counting, reducing system overhead caused by write delays. Actual memory density, interface speed and operating conditions should be confirmed from the original datasheet.

APPLICATIONS

Applications

  • Data logging and parameter storage in industrial equipment.
  • Event counting and run-log storage in instruments.
  • Non-volatile storage where frequent writes are required.
  • Saving configuration data in embedded systems.
FEATURES AND BENEFITS

Features and Benefits

  • I2C serial interface for easy connection to microcontrollers.
  • Ferroelectric storage mechanism requires no erase wait before writes.
  • Data is retained after power loss as non-volatile storage.
  • Suited to applications with frequent write operations.
  • Compact package facilitates layout on constrained boards.
ADDITIONAL DETAILS

Additional Details

When ordering, verify package, memory density marking, temperature range and interface version against the design, and confirm supply from original or authorized channels. Density and electrical parameters should follow the original datasheet.

Verify product details against the manufacturer datasheet before purchase.

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