MAX96717GTJ/VY+T
ADI(亚德诺) integrated circuits in TQFN-32 package.
- Package
- TQFN-32
Illustration for selection reference only
I2C interface ferroelectric random access memory (F-RAM) device
This device is a serial ferroelectric random access memory with an I2C interface, belonging to the non-volatile memory category and commonly supplied in an 8-pin SOIC package. Ferroelectric storage uses ferroelectric capacitors to hold data; writes do not require waiting for an internal erase cycle, and data is retained after power loss. Such devices are used where frequent writes or fast data saving are needed, such as data logging, parameter storage and event counting, reducing system overhead caused by write delays. Actual memory density, interface speed and operating conditions should be confirmed from the original datasheet.
When ordering, verify package, memory density marking, temperature range and interface version against the design, and confirm supply from original or authorized channels. Density and electrical parameters should follow the original datasheet.
Verify product details against the manufacturer datasheet before purchase.
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