MAX96717GTJ/VY+T
ADI(亚德诺) integrated circuits in TQFN-32 package.
- Package
- TQFN-32
Illustration for selection reference only
256Kb serial ferroelectric RAM, high-speed read/write non-volatile memory
This product is a 256Kb non-volatile memory using ferroelectric technology, featuring high-speed read/write, low power and high endurance. Ideal for applications requiring frequent data writes.
Refer to official documentation for specific capacity and interface details.
Verify product details against the manufacturer datasheet before purchase.
Submit your estimated quantity and contact details for a personal quote based on brand, lot and lead time.