Illustration for selection reference only

K4B2G1646F-BYMA

Samsung DDR3 synchronous dynamic random-access memory chip for data buffering in electronic devices.

Product Code
DHFE12740E
Brand
Samsung/三星半导体
Package
FBGA
Packaging
—
Category
Integrated Circuits
Weight
—
DatasheetNo verified manufacturer datasheet available yet
DESCRIPTION

Description

OVERVIEW

Product Overview

This device belongs to Samsung's memory product line. Model K4B2G1646F-BYMA is identified as a DDR3 synchronous dynamic random-access memory (SDRAM). It provides temporary data storage and read/write buffering in electronic systems, typically found in computers, network equipment and consumer electronics that require memory. This entry classifies the part only by its model naming convention. No original datasheet is supplied, so specific electrical parameters such as density, speed grade, voltage and timing are not listed. For procurement and selection, refer to the official manufacturer documentation and verify package, operating temperature and lot information.

APPLICATIONS

Applications

  • Used for memory data buffering on computer motherboards.
  • Used for temporary data storage in network equipment.
  • Used to support runtime memory in consumer electronics.
FEATURES AND BENEFITS

Features and Benefits

  • DDR3-class synchronous dynamic random-access memory.
  • Provides data read/write buffering capability.
  • FBGA package form for easy integration.
ADDITIONAL DETAILS

Additional Details

Some fields in the model number may correspond to density, bit width, speed and lot information and should be verified against the original datasheet. During procurement, confirm package, operating temperature range, packing form and availability of manufacturer quality documents, and avoid inferring electrical parameters from the model number alone.

Verify product details against the manufacturer datasheet before purchase.

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