MAX96717GTJ/VY+T
ADI(亚德诺) integrated circuits in TQFN-32 package.
- Package
- TQFN-32
Illustration for selection reference only
Gallium nitride power stage device for high-frequency switching power conversion.
The LMG3411R150RWHR is an integrated gallium nitride power stage device from Texas Instruments. It incorporates a GaN FET and its driver circuitry, suitable for high-frequency switching power supply designs. This device helps reduce switching losses and improve power density, and is commonly used in applications requiring efficient power conversion. Its package and pin configuration make it suitable for compact power supply solutions.
Specific electrical parameters, driver voltage range, and thermal performance should be referenced from the original manufacturer's datasheet. When purchasing, verify that the device is in original factory packaging and confirm that the operating temperature range matches the target application.
Verify product details against the manufacturer datasheet before purchase.
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