MAX96717GTJ/VY+T
ADI(亚德诺) integrated circuits in TQFN-32 package.
- Package
- TQFN-32
Illustration for selection reference only
Micron DDR4 SDRAM memory chip for computing and caching scenarios.
This device is a Micron DDR4 synchronous dynamic random-access memory. In the model, 256M16 relates to density and organization, HA and 125 relate to package and speed grade, and :E relates to revision identification. DDR4 memory provides working memory and data caching for processors with relatively high data transfer rates, suitable for servers, networking equipment, industrial computing, and other applications requiring dynamic random access. The FBGA package facilitates high-density mounting. Refer to the original datasheet for density, voltage, timing, and other parameters.
When purchasing, verify the speed grade, package code, and revision marking in the model suffix against the original design, and confirm original factory packaging. As original documentation is not provided, this page does not include specific parameters such as density, voltage, and timing; consult the corresponding datasheet.
Verify product details against the manufacturer datasheet before purchase.
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