MAX96717GTJ/VY+T
ADI（亚德诺） integrated circuits in TQFN-32 package.
- Package
- TQFN-32
Illustration for selection reference only
MT41K64M16TW-107:J
Micron DDR3L synchronous DRAM memory device for system memory.
- Product Code
- DH66D1D19C
- Brand
- Micron/美光
- Package
- —
- Packaging
- —
- Category
- Integrated Circuits
- Weight
- —
DatasheetNo verified manufacturer datasheet available yet
DESCRIPTION
Description
OVERVIEW
Product Overview
This device is a Micron DDR3L synchronous dynamic random access memory (SDRAM), a volatile memory used as working memory for processors. The part number conveys density, bit width and speed grade, but without original documentation, electrical parameters, timing and operating voltage should be taken from the official datasheet. Such devices are found in embedded boards, networking equipment and computing platforms; memory controller compatibility, power delivery and signal integrity must be considered.
APPLICATIONS
Applications
- Used as working memory on embedded boards and computing platforms.
- Used for data buffering in networking and communication equipment.
- Used in industrial and consumer devices requiring DDR3L memory.
FEATURES AND BENEFITS
Features and Benefits
- Synchronous DRAM with fast read and write access.
- Volatile memory suitable for runtime data buffering.
- Standard DDR3L interface for compatible memory controllers.
- Density and bit width vary by part number; refer to manufacturer data.
ADDITIONAL DETAILS
Additional Details
When purchasing, verify the full part number, speed grade, package and packing, and confirm compatibility with the board memory controller. Request the original datasheet and confirm authentic sourcing. Exact voltage, timing and capacity should follow official documentation.
Verify product details against the manufacturer datasheet before purchase.
REQUEST A QUOTE
Quote for MT41K64M16TW-107:J
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