IRF3205PBF
Infineon discrete semiconductors in TO-220 package.
- Package
- TO-220
Illustration for selection reference only
IPB042N10N3G
Infineon N-channel power MOSFET for switching and power conversion circuits.
- Product Code
- DH23C05C99
- Brand
- Infineon/英飞凌
- Package
- PG-TO263-3
- Packaging
- —
- Category
- Discrete Semiconductors
- Weight
- —
DatasheetNo verified manufacturer datasheet available yet
DESCRIPTION
Description
OVERVIEW
Product Overview
This device is an Infineon N-channel power MOSFET in a PG-TO263-3 surface-mount package, suitable for switching power supplies, motor drives, and load switching applications. Power MOSFETs control conduction and cutoff via gate voltage, enabling efficient power switching in circuits. Since the original datasheet is not provided, specific voltage ratings, on-resistance, current capability, and gate charge cannot be confirmed. Purchasing and design should refer to official manufacturer documentation.
APPLICATIONS
Applications
- Used for power switching stages in switching power supplies.
- Used for power switching in motor drive circuits.
- Used for load switching and power distribution control.
- Used for power stages in DC-DC converters.
FEATURES AND BENEFITS
Features and Benefits
- N-channel enhancement mode structure suitable for low-side switching applications.
- Surface-mount package facilitates automated assembly.
- Can be used in high-frequency switching for power conversion.
- Low on-resistance characteristic helps reduce conduction losses.
ADDITIONAL DETAILS
Additional Details
When purchasing, confirm package, voltage rating, current rating, and whether the source is original or authorized; specific electrical parameters should be based on the original datasheet.
Verify product details against the manufacturer datasheet before purchase.
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Quote for IPB042N10N3G
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