Illustration for selection reference only

ISC018N08NM6

Infineon N-channel MOSFET using OptiMOS 6 technology for power switching and conversion.

Product Code
DH52C5485C
Brand
Infineon/英飞凌
Package
PG-TSDSON-8
Packaging
—
Category
Discrete Semiconductors
Weight
—
DatasheetNo verified manufacturer datasheet available yet
DESCRIPTION

Description

OVERVIEW

Product Overview

The ISC018N08NM6 is an N-channel power MOSFET from Infineon's OptiMOS 6 family. It uses advanced trench gate technology to achieve low on-resistance and gate charge, making it suitable for high-frequency switching and efficient power conversion. Housed in a PG-TSDSON-8 package, it is designed for surface mounting and can be used in synchronous rectification, point-of-load converters, motor drives, and various power management circuits. Specific parameters such as drain-source voltage, current, and on-resistance should be confirmed from the original datasheet. Thermal design should be based on actual circuit conditions. No certifications or performance guarantees from the manufacturer are stated here.

APPLICATIONS

Applications

  • Used for power conversion and synchronous rectification in switching power supplies.
  • Used for point-of-load power management in DC-DC converters.
  • Used as power switches in motor drive circuits.
  • Used for power switch control in battery-powered devices.
FEATURES AND BENEFITS

Features and Benefits

  • Uses OptiMOS 6 technology to help reduce conduction losses.
  • Low gate charge characteristic suitable for high-frequency switching.
  • Surface-mount package for automated assembly.
  • Suitable for efficient power conversion designs.
ADDITIONAL DETAILS

Additional Details

When purchasing, verify parameters such as drain-source voltage, continuous drain current, on-resistance, and thermal resistance from the original datasheet. Confirm the package is PG-TSDSON-8 or equivalent, and observe ESD packaging and storage conditions.

Verify product details against the manufacturer datasheet before purchase.

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