IRF3205PBF
Infineon discrete semiconductors in TO-220 package.
- Package
- TO-220
Illustration for selection reference only
Infineon N-channel MOSFET using OptiMOS 6 technology for power switching and conversion.
The ISC018N08NM6 is an N-channel power MOSFET from Infineon's OptiMOS 6 family. It uses advanced trench gate technology to achieve low on-resistance and gate charge, making it suitable for high-frequency switching and efficient power conversion. Housed in a PG-TSDSON-8 package, it is designed for surface mounting and can be used in synchronous rectification, point-of-load converters, motor drives, and various power management circuits. Specific parameters such as drain-source voltage, current, and on-resistance should be confirmed from the original datasheet. Thermal design should be based on actual circuit conditions. No certifications or performance guarantees from the manufacturer are stated here.
When purchasing, verify parameters such as drain-source voltage, continuous drain current, on-resistance, and thermal resistance from the original datasheet. Confirm the package is PG-TSDSON-8 or equivalent, and observe ESD packaging and storage conditions.
Verify product details against the manufacturer datasheet before purchase.
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