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Schottky barrier diode for switching power supplies and freewheeling rectification.
ESD protection diode for transient protection of high-speed data interfaces.
N-channel power MOSFET for power conversion and load switching.
PNP small-signal transistor for signal amplification and switching.
Transient voltage suppressor diode for overvoltage transient protection.
NXP RF power transistor for wireless communication amplifiers.
PNP small-signal transistor for signal amplification and switching.
P-channel MOSFET for power switching and load driving.
Transient voltage suppressor diode array for ESD protection.
Dual-channel transient voltage suppressor for interface ESD protection.
N-channel MOSFET for signal switching and level shifting.
JSCJ BAS70-04 Schottky diode for switching and rectification.
Infineon N-channel power MOSFET for switching and power conversion circuits.
Infineon N-channel MOSFET using OptiMOS 6 technology for power switching and conversion.
Infineon P-channel MOSFET for load switching and power management.
Infineon P-channel MOSFET for load switching and power management.
Schottky diode with series dual-diode configuration for signal processing and circuit protection.
Small-signal switching diode for general signal rectification and switching circuits.
P-channel MOSFET used in power switching and signal switching circuits.
N-channel MOSFET used in switching and signal control circuits.
Surface-mount Zener diode for voltage clamping and regulation.
P-channel MOSFET for load switching and power path control.
NPN bipolar transistor for signal amplification and switching.
P-channel MOSFET for load switching and power management circuits.